Four-gate transistor analog multiplier circuit

A differential output analog multiplier circuit utilizing four G.sup.4-FETs, each source connected to a current source. The four G.sup.4-FETs may be grouped into two pairs of two G.sup.4-FETs each, where one pair has its drains connected to a load, and the other par has its drains connected to another load. The differential output voltage is taken at the two loads. In one embodiment, for each G.sup.4-FET, the first and second junction gates are each connected together, where a first input voltage is applied to the front gates of each pair, and a second input voltage is applied to the first junction gates of each pair. Other embodiments are described and claimed

Four-Quadrant Analog Multipliers Using G4-FETs

Theoretical analysis and some experiments have shown that the silicon-on-insulator (SOI) 4-gate transistors known as G4-FETs can be used as building blocks of four-quadrant analog voltage multiplier circuits. Whereas a typical prior analog voltage multiplier contains between six and 10 transistors, it is possible to construct a superior voltage multiplier using only four G4-FETs. A G4-FET is a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET). It can be regarded as a single transistor having four gates, which are parts of a structure that affords high functionality by enabling the utilization of independently biased multiple inputs. The structure of a G4-FET of the type of interest here (see Figure 1) is that of a partially-depleted SOI MOSFET with two independent body contacts, one on each side of the channel. The drain current comprises of majority charge carriers flowing from one body contact to the other that is, what would otherwise be the side body contacts of the SOI MOSFET are used here as the end contacts [the drain (D) and the source (S)] of the G4-FET. What would otherwise be the source and drain of the SOI MOSFET serve, in the G4-FET, as two junction-based extra gates (JG1 and JG2), which are used to squeeze the channel via reverse-biased junctions as in a JFET. The G4-FET also includes a polysilicon top gate (G1), which plays the same role as does the gate in an accumulation-mode MOSFET. The substrate emulates a fourth MOS gate (G2). By making proper choices of G4-FET device parameters in conjunction with bias voltages and currents, one can design a circuit in which two input gate voltages (Vin1,Vin2) control the conduction characteristics of G4-FETs such that the output voltage (Vout) closely approximates a value proportional to the product of the input voltages. Figure 2 depicts two such analog multiplier circuits. In each circuit, there is the following: The input and output voltages are differential, The multiplier core consists of four G4- FETs (M1 through M4) biased by a constant current sink (Ibias), and The G4-FETs in two pairs are loaded by two identical resistors (RL), which convert a differential output current to a differential output voltage. The difference between the two circuits stems from their input and bias configurations. In each case, provided that the input voltages remain within their design ranges as determined by considerations of bias, saturation, and cutoff, then the output voltage is nominally given by Vout = kVin1Vin2, where k is a constant gain factor that depends on the design parameters and is different for the two circuits. In experimental versions of these circuits constructed using discrete G4- FETs and resistors, multiplication of voltages in all four quadrants (that is, in all four combinations of input polarities) was demonstrated, and deviations of the output voltages from linear dependence on the input voltages were found to amount to no more than a few percent. It is anticipated that in fully integrated versions of these circuits, the deviations from linearity will be made considerably smaller through better matching of devices

G(sup 4)FET Implementations of Some Logic Circuits

Some logic circuits have been built and demonstrated to work substantially as intended, all as part of a continuing effort to exploit the high degrees of design flexibility and functionality of the electronic devices known as G(sup 4)FETs and described below. These logic circuits are intended to serve as prototypes of more complex advanced programmable-logicdevice-type integrated circuits, including field-programmable gate arrays (FPGAs). In comparison with prior FPGAs, these advanced FPGAs could be much more efficient because the functionality of G(sup 4)FETs is such that fewer discrete components are needed to perform a given logic function in G(sup 4)FET circuitry than are needed perform the same logic function in conventional transistor-based circuitry. The underlying concept of using G(sup 4)FETs as building blocks of programmable logic circuitry was also described, from a different perspective, in G(sup 4)FETs as Universal and Programmable Logic Gates (NPO-41698), NASA Tech Briefs, Vol. 31, No. 7 (July 2007), page 44. A G(sup 4)FET can be characterized as an accumulation-mode silicon-on-insulator (SOI) metal oxide/semiconductor field-effect transistor (MOSFET) featuring two junction field-effect transistor (JFET) gates. The structure of a G(sup 4)FET (see Figure 1) is the same as that of a p-channel inversion-mode SOI MOSFET with two body contacts on each side of the channel. The top gate (G1), the substrate emulating a back gate (G2), and the junction gates (JG1 and JG2) can be biased independently of each other and, hence, each can be used to independently control some aspects of the conduction characteristics of the transistor. The independence of the actions of the four gates is what affords the enhanced functionality and design flexibility of G(sup 4)FETs. The present G(sup 4)FET logic circuits include an adjustable-threshold inverter, a real-time-reconfigurable logic gate, and a dynamic random-access memory (DRAM) cell (see Figure 2). The configuration of the adjustable-threshold inverter is similar to that of an ordinary complementary metal oxide semiconductor (CMOS) inverter except that an NMOSFET (a MOSFET having an n-doped channel and a p-doped Si substrate) is replaced by an n-channel G(sup 4)FE

Universal programmable logic gate and routing method

An universal and programmable logic gate based on G.sup.4-FET technology is disclosed, leading to the design of more efficient logic circuits. A new full adder design based on the G.sup.4-FET is also presented. The G.sup.4-FET can also function as a unique router device offering coplanar crossing of signal paths that are isolated and perpendicular to one another. This has the potential of overcoming major limitations in VLSI design where complex interconnection schemes have become increasingly problematic

Using G4FETs as a Data Router for In-Plane Crossing of Signal Paths

Theoretical analysis and some experiments have demonstrated that siliconon- insulator (SOI) 4-gate transistors the type known as G(exp 4)FETs could be efficiently used for in-plane crossing of signal paths. Much of the effort of designing very-large-scale integrated (VLSI) circuits is focused on area-efficient routing of signals. The main source of difficulty in VLSI signal routing is the requirement to prevent crossing, in the same plane, of wires that are meant to be kept electrically insulated from each other. Consequently, it often becomes necessary to design and build VLSI circuits in multiple layers with vias (connections between conductors in different layers at selected locations). Suitable devices that would prevent, or at least sufficiently suppress, undesired electrical coupling (cross-talk) between wires crossing in the same plane would enable compact, simpler implementation complex interconnection networks with in-plane crossings that, heretofore, have not been possible in VLSI circuitry. The use of G4FETs as in-plane signal-crossing devices or routers, in combination with the use of G(exp 4)FETs as universal programmable logic gates, would create opportunities for reducing complexity in VLSI design

Technology Projection Using Simple Compact Models

Abstract-We review recent efforts to capture the device nonidealities for circuit-level technology projection for Si CMOS. We also give some examples of simple compact model development for assessing the circuit-level performance of exploratory devices such as III-V FET, carbon nanotube transistor, and nanoelectromechanical (NEM) transistors and relays

Transistor SOI à quatre grilles (caractérisation, modélisation et applications)

Dans ce travail, nous présentons une étude approfondie du transistor SOI à quatre grilles, le G4-FET. Le G4-FET dispose de quatre grilles indépendantes qui maximisent la fonctionnalité en combinant les effets MaS et JFET simultanément, dans une même région du semiconducteur (le "body"). Notre analyse repose sur la distinction entre les modes de conduction surfacique et volumique du G4-FET et comporte trois parties: caractérisation, modélisation et applications. Dans la première partie, nous introduisons les caractéristiques statiques, les mesures de bruit basse fréquence, d'irradiation et de basse température. A partir des résultats expérimentaux, nous démontrons qu'en mode volumique, le G4-FET présente un potentiel considérable pour les applications analogiques, notamment à faible bruit. Ensuite, la comparaison in situ des caractéristiques de bruit pour différents modes de conduction nous permet de contribuer au "débat éternel" sur l'origine du bruit en 1/f. Finalement, à partir des caractéristiques d'irradiation du G4-FET nous mettons en évidence, pour la première fois, la neutralisation des accepteurs induite par l'irradiation dans les transistors MaS SOI à canal n partiellement désertés. Dans la deuxième partie, nous modélisons la distribution de potentiel 2-D du body, qui constituera la base pour nos modèles de tension de seuil, pente sous le seuil et courant de drain. Le modèle de potentiel et les équations de couplage qui en résultent sont applicables aux transistors MaS SOI complètement désertés à canal court et aux transistors à triple-grille. La troisième partie est consacrée aux circuits analogiques et numériques innovants à base de G4-FETs : multiplieur analogique, dispositif à résistance différentielle négative commandé en tension, oscillateur LC, trigger de Schmitt, inverseur G4-FET, porte logique reconfigurable et cellule à gain DRAM.GRENOBLE1-BU Sciences (384212103) / SudocSudocFranceF

Finite element analysis and analytical simulations of Suspended Gate-FET for ultra-low power inverters

This paper proposes, the investigation of the Suspended Gate Field-Effect Transistor (SG-FET) small-slope switch based on a hybrid numerical simulation approach combining ANSYSTM Multiphysics and ISE-DESSISTM in a self-consistent system. The proposed numerical simulations uniquely enable the investigation of the behavior and the physics of complex micro-electro-mechanical/solid-state devices, such as the SG-FET. Abrupt switching as well as the effect of trapped charges in the gate dielectric are demonstrated. The numerical data serve to calibrate an analytical EKV-based SG-FET model, which is then used to design and originally simulate a sub-micron (90 nm) scaled SG-FET complementary inverter. It is shown that, due to abrupt switching in the subthreshold region and electro-mechanical hysteresis, the SG-FET inverter could deliver a significant power saving (1-2 decades reduction of inverter peak current and practically no leakage power) compared to traditional CMOS inverter

Enhanced coupling effects in vertical double-gate FinFETs

International audienceVertical double-gate (DG) FinFETs fabricated on SOI wafers show good gate control, reasonable threshold voltage and high carrier mobility despite the absence of the top-gate. The 3D coupling effect between the two lateral-gates and the back-gate is investigated based on experimental and simulation results. We compare DG and triple-gate FinFETs with various fin widths. Front-channel characteristics are easily tuned by applied bias at the back-gate if the fin is not too narrow. We highlight that vertical DG FinFET is more appropriate device for dynamic threshold voltage adjustment than triple-gate FinFET. An analytical model is proposed to quantify the coupling effect in DG FinFET by solving 2D Poisson equation. The body potential profile and coupling effect are modeled. A very good agreement is obtained between experiments, 3D simulations and the proposed model